A 155=GHz Monolithic Low Noise Amplifier
نویسندگان
چکیده
This paper presents the design, fabrication and performance of a three-stage 155GHz monolithic low noise amplifier (LNA) using 0.1 -pm pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology. This amplifier exhibits a measured small signal gain of 12 dB at 155 GHz, and more than 10 dB gain from 151 to 156 GHz. When this amplifier is biased for low noise figure, a noise figure of 5.1 dB with associated gain of “IO. 1 dB is achieved. Besides its excellent noise performance, this is the highest frequency amplifier ever reported using three terminal devices.
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